Determination of the responsivity of a predictable quantum efficient detector over a wide spectral range based on a 3D model of charge carrier recombination losses

Abstract We present a method to determine the internal quantum deficiency (IQD) of predictable efficient detector (PQED) based on measured photocurrent dependence bias voltage and 3D simulation model charge carrier recombination losses. The silicon photodiodes includes wafer doping concentration, fixed SiO 2 layer, bulk lifetime carriers surface velocity as fitted parameters. With only one set physical photodiode defining parameters, shows excellent agreement with experimental data at power levels from 100 μW 1000 variation in illumination beam size. could also predict IQD wavelength 476 nm using parameters determined independently 647 wavelength. values concentration extracted are close expected parameter earlier. At voltages larger than 5 V nm, efficiency tested PQEDs is be 0.999 970 ± 0.000 027, where relative expanded uncertainty 027 lowest ever achieved spectral responsivity measurement optical detectors.